Description The module is designed for both Industrial and commercial applications. The latest device technologies and design methods are

1.RF DATA Item Spec. Remarks   Frequency Range   300-400MHz Bandwidth Range±10MHz   Frequency Range   400-500 MHz Bandwidth Range±10MHz  

26.5 – 40GHz Broadband RF Power Amplifiers for millimeter-wave communications   Description The module is

Description The module is designed for both military and commercial applications. The latest device technologies and design methods are

EMC High Power Amplifier 3-6 GHz Psat 100 W Wideband Power Amplifier   Description The

3 -18 GHz Psat 42dB Wideband RF Power Amplifier High Power Amplifier for measurement, and

Description The module is designed for both military and commercial applications. The latest device technologies and design methods are employed to offer high power density, efficiency, and linearity in a small, lightweight  package. Specification Typical performance at 28V DC +25oC, and in a 50Ω system. RF / ELECTRICAL PARAMETER

100W Module Technical Datasheet RF DATA Item Spec. Remarks   Frequency Range   300-400MHz Bandwidth Range±10MHz  

Description The module is designed for commercial applications. The latest device technologies and design methods are employed to offer high power density, efficiency, and linearity in a small, lightweight  package. Specification

Main Technical Specifications Parameter Code Min TYP Max Unit Operating Frequency BW 2.45 GHz Saturated

Description The module is designed for both military and commercial applications. The latest device technologies and design methods are employed to offer high power density, efficiency, and linearity in a small, lightweight  package. Specification Typical performance at +28 VDC  +25oC, and in a 50Ω system. RF

Description The module is designed for both military and commercial applications. The latest device technologies and design methods are