• Home /
  • Products /
  • High-performance device 5000-5990MHz RF Power Amplifier for Wi-Fi , 5G millimeter-wave, and satellite communication
1732860436934507 1732860433104687 1732860434589604 1732860437769902 1732860437469223 1732860437112572

High-performance device 5000-5990MHz RF Power Amplifier for Wi-Fi , 5G millimeter-wave, and satellite communication

Minimum Order Quantity

1/pcs

Packaging Details

Standard Packing

Delivery Time

5-8 work days

Payment Terms

L/C, D/A, D/P, T/T, Western Union, MoneyGram

High-performance device 5000-5990MHz RF Power Amplifier for Wi-Fi , 5G millimeter-wave, and satellite communication

The 5000-5990 MHz RF Power Amplifier is a high-performance device designed for the 5-5.99 GHz frequency range, delivering up to 50W of output power. It is widely used in wireless communication, radar systems, electronic warfare, and testing equipment, making it ideal for scenarios requiring high-frequency and medium-power solutions.



1.jpg


Features

  1. Wide Frequency Coverage: Operates within the 5-5.99 GHz range, meeting the needs of advanced communication and signal transmission.

  2. High Power Output: Provides stable output power of up to 50W, ensuring reliable performance.

  3. High Efficiency: Optimized energy conversion efficiency, reducing heat loss.

  4. Compact Design: Modular or chassis-based design for easy integration into various systems.


Typical Applications

  1. Wireless Communication: Widely used in Wi-Fi (especially Wi-Fi 6E), 5G millimeter-wave, and satellite communication.

  2. Radar Systems: Supports high-frequency radar applications such as long-range monitoring, maritime surveillance, and aviation radar systems.

  3. Electronic Warfare: Enhances the output of jamming signals, playing a critical role in electronic warfare.

  4. Testing Equipment: Serves as an RF signal amplification module in laboratory and industrial testing systems.

  5. Research and Development: Provides support for prototype validation and advanced RF technology development.


Technical Choices

  1. Core Technology: Utilizes Gallium Nitride (GaN) or LDMOS transistor technology, offering high power density and excellent linearity.

  2. Thermal Management: Equipped with air-cooled or liquid-cooled designs to ensure stable operation during high-power output.

  3. Protection Features: Includes built-in over-temperature, overload, and reflected power protection (VSWR protection) to extend the device's lifespan.

  4. Modular Design: Enables easy system integration and customization based on specific requirements.

This 5000-5990 MHz 50W RF Power Amplifier, with its superior performance, wide frequency range, and high reliability, is an essential choice for modern wireless communication and defense applications.

Specification

Typical performance at +28VDC +25oC, and in a 50Ω system.

 

RF / ELECTRICAL

PARAMETER

MIN

TYP.

MAX

UNIT

Operating Frequency

5000


5990

MHz

Oeration mode

Sweep frequency   source

P-sat   Power Output

46.5

47


dBm

Power Gain Flatness


±2.5


dB

Input  VSWR



2


Operating Voltage


28


VDC

In-Out impedance


50


Current


9


A

 

MECHANICAL

PARAMETER

VALUE

UNIT

Dimensions (L x W x H)

200x120x30

mm

RF Connectors (Input / Output)

N- KFD

DC / Control Connector

D SUB 7W2

Cooling

Consider heat dissipation with the system

Mounting

3-6 Thru Hole

Weight

1.5

kg

 

 

ENVIRONMENTAL / PROTECTIONS

PARAMETER

MIN

MAX

UNIT

Operating Temp. (Housing Temp.)

-40

+60

°C

Humidity Range

0-100

%

PA Baseplate Shutoff Temperature

+ 90

°C

 

 

INPUT/OUTPUT PINS

AMPLIFIER CONNECTOR TYPE:

D SUB   7W2

TRIAD CABLE PART NUMBER:

——

PIN NUMBER

LABEL

DESCRIPTION

A1

+VDC

+28V

A2

GND

Ground

1-2

NC

NC

3

RS485A

Gain Control and Seep speed Control

4

RS485B

5

GND






 



Technical Parameters

Advantages

Why Choose Us

Established in 2008

Focused on the development and manufacturing of RF and microwave products.

RF & Microwave Expertise

Product capabilities cover power amplifiers, active and passive components, antennas and subsystems.

Custom Engineering Support

Standard and customized solutions are available for different frequency, power, gain and interface requirements.

R&D and Production Capability

Supported by an experienced technical team, production facilities and continued product development.

Why Choose Us

01

02

03

04

05

06

Related Products

X-Band 8000-11000MHz 20W Wideband Amplifier Microwave RF Power Amplifier for Satellite Communications     Description

Description This 100W microwave power amplifier operates at 10700-12700MHz, compatible with 50Ω RF systems and

Description   The module is designed for both military and commercial applications. The latest device

High-power microwave amplifier 9-10GHz 6KW Traveling WaveTube RF power amplifier The 9-10GHz 6kW TWT RF

Certificate

Blogs

exhibition_3
Read More

Get Inquiry

About Us

Nanjing Shinewave Technology Co., Ltd., established in 2008, specializes in the development, manufacturing and supply of RF and microwave products. Our portfolio includes power amplifiers, low-noise amplifiers, transceiver modules, frequency converters, frequency sources, passive components, antennas and subsystems. We provide both standard and customized solutions for a wide range of RF and microwave applications.

Get Inquiry

Get Inquiry