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8-11GHz 20W RF Power Amplifier for Point-to-Point Microwave Communication with GaN Technology

Minimum Order Quantity

1/pcs

Packaging Details

Standard Packing

Delivery Time

5-8 work days

Payment Terms

L/C, D/A, D/P, T/T, Western Union, MoneyGram

8-11GHz 20W RF Power Amplifier for Point-to-Point Microwave Communication with GaN Technology

 

8-11GHz 20W RF Power Amplifier for Point-to-Point Microwave Communication with GaN Technology 0

Description

 

The 8-11GHz 20W RF Power Amplifier is extensively used in radar systems, satellite communications, wireless communications, and electronic warfare. Operating within the microwave frequency range, which includes the X-band and part of the Ku-band, this amplifier is designed to deliver high power, efficiency, and linearity to meet the demands of various high-frequency applications.

Key Features

  1. Frequency Range: Covers the 8GHz to 11GHz frequency range.

  2. Power Output: Delivers a high power output of 20 watts, suitable for demanding applications.

  3. High Efficiency: Ensures high efficiency, reducing power consumption and heat generation.

  4. High Linearity: Provides low distortion and high signal integrity, crucial for communication and radar systems.

  5. Robust Design: Built with durable components and advanced thermal management, ensuring stable operation in various environments.

Application Areas

  1. Radar Systems:

    • Military Radar: Used for target detection and tracking, enhancing radar system detection range and resolution.

    • Weather Radar: Utilized in meteorological monitoring to detect and analyze precipitation, wind speed, and other weather phenomena.

    • Aviation Radar: Employed in air traffic control and flight safety to provide high-precision target detection and tracking.

  2. Satellite Communications:

    • Satellite Uplink and Downlink: Enhances signal amplification in satellite communication systems, ensuring stable and high-quality communication links.

    • Ground Station Communication: Improves the transmission and reception performance of signals in satellite ground stations.

  3. Wireless Communications:

    • Point-to-Point Microwave Communication: Used for long-distance, high-bandwidth point-to-point communication links, providing stable high data rate transmission.

    • Wireless Backhaul: Utilized in cellular networks and other wireless communication systems to connect base stations to the core network.

  4. Electronic Warfare:

    • Jamming and Countermeasures: Employed in military electronic warfare to generate jamming signals that disrupt enemy communications and radar systems.

    • Signal Intelligence: Used to intercept and analyze enemy signals, providing critical information to support military operations.

  5. Test and Measurement Equipment:

    • Signal Generators and Analyzers: Used in test equipment to generate and measure high-precision, high-frequency RF signals.

    • Laboratory and R&D: Supports signal amplification and processing in scientific research and technology development.

Technical Challenges

  1. Thermal Management: High-power amplifiers generate significant heat, requiring effective thermal management to prevent overheating and performance degradation.

  2. Power Management: Requires stable power management systems to ensure reliable operation under high power output conditions.

  3. Linearity and Efficiency Optimization: Balancing high linearity with efficiency is a key challenge in RF power amplifier design.

  4. Frequency Stability: Maintaining frequency stability at high frequencies to ensure reliable and consistent signal transmission.

  5. Broadband Matching: Ensuring good input and output matching across the 8-11GHz frequency range to maintain stable and efficient signal transmission.

 

Outline Dimensional Drawing

 

8-11GHz 20W RF Power Amplifier for Point-to-Point Microwave Communication with GaN Technology 1

Specification

Typical performance at +28 VDC +25oC, and in a 50Ω system.

 

RF / ELECTRICAL
PARAMETERMINTYP.MAXUNIT
Operating Frequency8000
11000MHz
RF INPUT
05dBm
P-sat Power Output
43
dBm
Power Gain
43
dB
Power Gain Flatness
±3
dB
Input VSWR

2
Operating Voltage
28
VDC
InOut impedance
50
Current
68A

 

MECHANICAL
PARAMETERVALUEUNIT
Dimensions (L x W x H)150 x 75 x 21.5mm
RF Connectors (Input / Output)SMA– KFD/ N- KFD
DC ConnectorFeed Capacitor
CoolingConsider heat dissipation with the system
Mountingφ3.5-6 Thru Hole
Weight2.5kg

 

ENVIRONMENTAL / PROTECTIONS
PARAMETERMINMAXUNIT
Operating Temp. (Housing Temp.)-40+85°C
Humidity Range0-100%
PA Baseplate Shutoff Temperature+ 90°C


Technical Parameters

Advantages

Why Choose Us

Established in 2008

Focused on the development and manufacturing of RF and microwave products.

RF & Microwave Expertise

Product capabilities cover power amplifiers, active and passive components, antennas and subsystems.

Custom Engineering Support

Standard and customized solutions are available for different frequency, power, gain and interface requirements.

R&D and Production Capability

Supported by an experienced technical team, production facilities and continued product development.

Why Choose Us

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About Us

Nanjing Shinewave Technology Co., Ltd., established in 2008, specializes in the development, manufacturing and supply of RF and microwave products. Our portfolio includes power amplifiers, low-noise amplifiers, transceiver modules, frequency converters, frequency sources, passive components, antennas and subsystems. We provide both standard and customized solutions for a wide range of RF and microwave applications.

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