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8-11GHz 20w high-frequency signal amplification RF Power Amplifier Low Distortion Amplification Amplifier module

Minimum Order Quantity

1/pcs

Packaging Details

Standard Packing

Delivery Time

5-8 work days

Payment Terms

L/C, D/A, D/P, T/T, Western Union, MoneyGram

 8-11GHz 20w high-frequency signal amplification RF Power Amplifier Low Distortion Amplification Amplifier module1.jpg

  • Introduction
    This is an RF power amplifier operating in the 8-11GHz frequency range, specifically designed for microwave applications. It is ideal for radar systems, satellite communications, electronic warfare, and scientific testing requiring high-frequency signal amplification.

  • Key Features

    • Frequency Range: Covers a wideband range of 8-11GHz, suitable for various microwave applications.

    • High Output Power: Delivers output power ranging from tens to hundreds of watts, meeting the needs of long-distance communication and strong signals.

    • Low Distortion Amplification: Features a linear design to minimize signal distortion and interference, ensuring high-quality output.

    • High Efficiency: Optimized circuit design for high efficiency and low power consumption, supporting long-term stable operation.

  • Design Highlights

    • Robust Structure: Metal enclosure for excellent heat dissipation and electromagnetic shielding performance.

    • Flexible Interfaces: Equipped with RF IN/OUT and DC & CONTROL interfaces, facilitating installation and integration.

    • Thermal Management: Built-in or external cooling system to ensure stable operation under high-power conditions.

  • Application Scenarios

    • Radar Systems: Amplifies high-frequency signals, enhancing target detection capabilities.

    • Satellite Communications: Used in ground stations or space communication to strengthen signal transmission.

    • Electronic Warfare: Supports signal jamming and enhancement in military applications.

    • Scientific Research: Assists laboratories in testing and analyzing high-frequency signals.

Specification

Typical performance at +28VDC +25oC, and in a 50Ω system.

 

RF / ELECTRICAL

PARAMETER

MIN

TYP.

MAX

UNIT

Operating Frequency

8000


11000

MHz

RF   INPUT

0

3

5

dBm

Input level   peak-to-peak:



10

dBm

P-sat   Power Output

42

43

45

dBm

Power Gain Flatness


±1.5


dB

Harmonic  Signals


-30


dB

Spurious Signals


-50


dB

Input  VSWR


1.8

2


Operating Voltage

28

30

32

VDC

In-Out impedance


50


Current


3


A

 

MECHANICAL

PARAMETER

VALUE

UNIT

Dimensions (L x W x H)

119x80x82

mm

RF Connectors (Input / Output)

SMA female/SMA female

DC / Control Connector

J30J-15ZKP

Cooling

Consider heat dissipation with the system

Mounting

3-6 Thru Hole

Weight

1.5

kg

 

ENVIRONMENTAL / PROTECTIONS

PARAMETER

MIN

MAX

UNIT

Operating Temp. (Housing Temp.)

-40

+60

°C

Humidity Range

0-100

%

PA Baseplate Shutoff Temperature

+ 90

°C

 

Outline Dimensional Drawing 

图片1.png


Technical Parameters

Advantages

Why Choose Us

Established in 2008

Focused on the development and manufacturing of RF and microwave products.

RF & Microwave Expertise

Product capabilities cover power amplifiers, active and passive components, antennas and subsystems.

Custom Engineering Support

Standard and customized solutions are available for different frequency, power, gain and interface requirements.

R&D and Production Capability

Supported by an experienced technical team, production facilities and continued product development.

Why Choose Us

01

02

03

04

05

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About Us

Nanjing Shinewave Technology Co., Ltd., established in 2008, specializes in the development, manufacturing and supply of RF and microwave products. Our portfolio includes power amplifiers, low-noise amplifiers, transceiver modules, frequency converters, frequency sources, passive components, antennas and subsystems. We provide both standard and customized solutions for a wide range of RF and microwave applications.

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