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20 – 40GHz Millimeter Wave Amplifiers 40dB LNA Low Noise Amplifiers for high-frequency commuication

Minimum Order Quantity

1/pcs

Packaging Details

Standard Packing

Delivery Time

5-8 work days

Payment Terms

L/C, D/A, D/P, T/T, Western Union, MoneyGram

20 – 40GHz Millimeter Wave Amplifiers 40dB LNA Low Noise Amplifiers for high-frequency commuication

 

Description

Frequency Range: This millimeter wave amplifier is designed for the frequency range of 20 GHz to 40 GHz, within the millimeter-wave spectrum. This frequency band is commonly used in high-frequency communication, radar, radio, and other RF applications.

Wideband Design: It features a wideband design, capable of effectively amplifying signals across the entire frequency range. This ensures stable amplification of signals across different frequencies.

Applications: The amplifier is suitable for various RF systems operating in the millimeter-wave frequency band, including but not limited to communication, radar, radio, medical equipment, aerospace, and other fields.

Technical Features: It boasts excellent linearity, low noise figure, high gain, and other technical features, ensuring high-quality amplification of signals.

Stability and Reliability: Engineered for stability and reliability, it maintains consistent performance even under prolonged operation and in harsh environmental conditions.

Overall, this 20 – 40 GHz Millimeter Wave Amplifiers feature a wideband design, stability, and reliability, making it suitable for a wide range of high-frequency RF applications, meeting the requirements for signal amplification and stability.

 

Specification

Specifications subject to change without notice. Typical performance at +28VDC +25℃, and in a 50Ω system.

 

ELECTRICAL SPECIFICATIONS@25
PARAMETERMINTYPICALMAXUNIT
Frequency Range20
40GHz
Gain40

dB
Gain Flatness


dB
Noise Figure


dB
Output Power (Psat)30

dBm
Spurious

-60dBc
Harmonics
-15
dBc
VSWR
2:1
Ratio
Power Supply
+6
Volt
Current
2.5
A

 

ENVIRONMENTAL RATINGS
PARAMETERMINTYPICALMAXUNIT
Max Input power

+5dBm
Operating Temperature-20
+60
Non-operating Temperature-40
+85
Relative humidity (non-condensing)
95
%
Altitude (MIL-STD-810F)
/
feet
Shock / Vibration (MIL-STD-810F)
/

 

MECHANICAL SPECIFICATIONS
PARAMETERVALUELIMITSUNIT
Dimensions150*120*15MaxMillimeter
Weight0.6MaxKg
RF Connectors Input2.92mm-F

RF Connectors output2.92mm-F

Impedance50
Ohms


Technical Parameters

Advantages

Why Choose Us

Established in 2008

Focused on the development and manufacturing of RF and microwave products.

RF & Microwave Expertise

Product capabilities cover power amplifiers, active and passive components, antennas and subsystems.

Custom Engineering Support

Standard and customized solutions are available for different frequency, power, gain and interface requirements.

R&D and Production Capability

Supported by an experienced technical team, production facilities and continued product development.

Why Choose Us

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About Us

Nanjing Shinewave Technology Co., Ltd., established in 2008, specializes in the development, manufacturing and supply of RF and microwave products. Our portfolio includes power amplifiers, low-noise amplifiers, transceiver modules, frequency converters, frequency sources, passive components, antennas and subsystems. We provide both standard and customized solutions for a wide range of RF and microwave applications.

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