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High performance 0.8 – 2GHz L Band Power Amplifier Psat 57dBm High Power RF Amplifier For EMC Test

Minimum Order Quantity

1/pcs

Packaging Details

Standard Packing

Delivery Time

5-8 work days

Payment Terms

L/C, D/A, D/P, T/T, Western Union, MoneyGram

High performance 0.8 – 2GHz L Band Power Amplifier Psat 57dBm High Power RF Amplifier For EMC Test

 

Description

The 0.8-2 GHz Psat 57 dBm RF Power Amplifier Box is a high-performance amplifier designed for a wide range of RF applications, including communications, radar, and electronic warfare. This amplifier provides exceptional power output, linearity, and efficiency, making it ideal for demanding environments.

Key Features:

  1. Wide Frequency Range: Operates over a broad frequency range from 0.8 GHz to 2 GHz, suitable for various RF applications.

  2. High Output Power: Delivers a saturated output power (Psat) of 57 dBm, equivalent to approximately 500 watts.

  3. High Gain: Provides significant gain to amplify weak input signals to a high-power output.

  4. Efficient Cooling: Equipped with an advanced cooling system to maintain optimal operating temperatures and ensure reliable performance.

  5. Robust Design: Built with rugged components and housed in a durable enclosure to withstand harsh environments and prolonged use.

  6. High Linearity: Ensures excellent linearity, minimizing distortion and maintaining signal integrity.

  7. Protection Features: Includes built-in protection against over-temperature, over-voltage, and over-current conditions to safeguard the amplifier.

Applications:
Communications: Enhances signal strength for long-range communication systems, including base stations and repeaters.
Radar Systems: Provides high-power amplification for radar transmitters, improving target detection and range.
Electronic Warfare: Used in jamming systems and other electronic warfare applications to disrupt enemy communications and radar.
Test and Measurement: Essential for high-power RF testing and measurements in laboratory and field environments.
Broadcasting: Amplifies signals for FM, TV, and other broadcasting applications to cover larger areas with clear signals.
Advantages:
Versatility: Suitable for a wide range of frequencies and applications, offering flexibility in deployment.
High Reliability: Built to perform reliably in demanding conditions with robust construction and protection features.
Ease of Integration: Designed for easy integration into existing systems with standard RF interfaces and control options.

 

Specification

Specifications subject to change without notice. Typical performance at +28VDC +25℃, and in a 50Ω system.

ELECTRICAL SPECIFICATIONS@25
PARAMETERMINTYPICALMAXUNIT
Frequency Range0.8
2GHz
Gain60

dB
Small Signal Gain Flatness
±1.5
dB
Noise Figure


dB
Output Powe (Psat)57

dBm
Spurious
-60
dBc
Harmonic
-10
dBc
Input VSWR

2:1Ratio
Input Voltage
220VAC

Human-computer InterfaceLCD display information: Voltage, Current, Temperature, FWD/REV Power
Program Control InterfacRS232 and Ethernet

 

Note:

1. Forced Air Cooling.

2. Over Temperature Protection; Over Voltage Protection; Over Current Protection;

    Over REV VSWR Protection.

ENVIRONMENTAL RATINGS
PARAMETERMINTYPICALMAXUNIT
Max Input power
+10
dBm
Operating Temperature-10
+50
Non-operating Temperature-20
+70
Relative humidity (non-condensing)
95
%
Altitude (MIL-STD-810F)
TBD
feet
Shock / Vibration (MIL-STD-810F)
TBD

 

MECHANICAL SPECIFICATIONS
PARAMETERVALUELIMITSUNIT
Dimensions6UMaxMillimeter
Weight25000Maxgram
RF Connectors InputSMA-F

RF Connectors outputN-F

Output Coupling ConnectorsSMA-F

Impedance50
Ohms


Technical Parameters

Advantages

Why Choose Us

Established in 2008

Focused on the development and manufacturing of RF and microwave products.

RF & Microwave Expertise

Product capabilities cover power amplifiers, active and passive components, antennas and subsystems.

Custom Engineering Support

Standard and customized solutions are available for different frequency, power, gain and interface requirements.

R&D and Production Capability

Supported by an experienced technical team, production facilities and continued product development.

Why Choose Us

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About Us

Nanjing Shinewave Technology Co., Ltd., established in 2008, specializes in the development, manufacturing and supply of RF and microwave products. Our portfolio includes power amplifiers, low-noise amplifiers, transceiver modules, frequency converters, frequency sources, passive components, antennas and subsystems. We provide both standard and customized solutions for a wide range of RF and microwave applications.

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