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High-Efficiency Design L Band Power Amplifier for Cellular Communication with Semiconductor Technology

Minimum Order Quantity

1/pcs

Packaging Details

Standard Packing

Delivery Time

5-8 work days

Payment Terms

L/C, D/A, D/P, T/T, Western Union, MoneyGram

High-Efficiency Design L Band Power Amplifier for Cellular Communication with Semiconductor Technology

The 1500-1900MHz 2W RF power amplifier is a high-performance device designed for wireless communication systems, featuring the following key characteristics:

  1. Frequency Range: Supports 1500MHz to 1900MHz, suitable for cellular communication, public safety communication, RFID, and other applications.

  2. Output Power: 2W (33dBm), enhancing signal coverage and transmission distance.

  3. High Linearity: Ensures low distortion transmission of complex modulated signals, improving communication quality.

  4. High Gain: 30dB gain, effectively amplifies weak signals.

  5. High-Efficiency Design: Utilizes efficient semiconductor technology, offering low power consumption and excellent thermal management.

  6. Compact Design: Suitable for integration into various devices, with stable operation in harsh environments.

This amplifier is widely used in wireless communication base stations, emergency communication, satellite communication, and RFID systems.


Specification
Typical performance at +24VDC +25oC,and in a 50Ω system.

RF / ELECTRICAL
PARAMETERMINTYP.MAXUNIT
Operating Frequency1500
1900MHz
RF INPUT
0
dBm
RF INPUT NO Damage

10dBm
P-1 Power Output
33
dBm
P-sat Power Output

39dBm
Power Gain
3339dB
Power Gain Flatness
±0.5
dB
Input  VSWR
1.52
Operating Voltage262830VDC
Spurious Signals

-60dBc
Harmonic  Signals
-20-15dBc
In-Out impedance
50

Current
1
A

 

MECHANICAL
PARAMETERVALUEUNIT
Dimensions (L x W x H)150*90*25mm
RF Connectors (Input / Output)SMA- KFD/ SMA- KFD
DC / Control ConnectorDB9
CoolingAir cooled heat dissipation, size to be determined
Mounting3-4 Thru Hole
Weight≤1.2kg

 

ENVIRONMENTAL / PROTECTIONS
PARAMETERMINMAXUNIT
Operating Temp. (Housing Temp.)-40+65°C
Humidity Range0-100%
PA Baseplate Shutoff Temperature+ 85°C
FinishNatural color conductive oxidation of aluminum alloy surface

 

INPUT/OUTPUT PINS
AMPLIFIER CONNECTOR TYPE:DB9
TRIAD CABLE PART NUMBER:
PIN NUMBERLABELDESCRIPTION
1Amp EnableTTL Hi= Disable, TTL Lo or No Connection = Enable
2GNDGND
3FWDForward Power Detection  (TTL Hi= Normal , TTL Lo =Fault )
4REVReverse Power Detection(TTL Hi=  Normal , TTL Lo = Fault )
5-9NCNC


Outline Dimensional Drawing

图片1.png

Technical Parameters

Advantages

Why Choose Us

Established in 2008

Focused on the development and manufacturing of RF and microwave products.

RF & Microwave Expertise

Product capabilities cover power amplifiers, active and passive components, antennas and subsystems.

Custom Engineering Support

Standard and customized solutions are available for different frequency, power, gain and interface requirements.

R&D and Production Capability

Supported by an experienced technical team, production facilities and continued product development.

Why Choose Us

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About Us

Nanjing Shinewave Technology Co., Ltd., established in 2008, specializes in the development, manufacturing and supply of RF and microwave products. Our portfolio includes power amplifiers, low-noise amplifiers, transceiver modules, frequency converters, frequency sources, passive components, antennas and subsystems. We provide both standard and customized solutions for a wide range of RF and microwave applications.

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