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Customized 4500-5000MHz 100W High Power RF Power Amplifier for Telecommunication

Minimum Order Quantity

1/pcs

Packaging Details

Standard Packing

Delivery Time

5-8 work days

Payment Terms

L/C, D/A, D/P, T/T, Western Union, MoneyGram

Description

 

The C Band 4500-5000MHz 100W RF Power Amplifier is a specialized device designed to amplify radio frequency (RF) signals within the C Band frequency range, specifically from 4500 megahertz (MHz) to 5000MHz. Here's a detailed introduction to this RF power amplifier:

  1. Frequency Range: This power amplifier operates within the C Band frequency range, covering frequencies from 4500MHz to 5000MHz. The C Band is commonly used in satellite communications, radar systems, and other high-frequency RF applications.

  2. Power Output: The amplifier provides a power output of 100 watts, making it suitable for applications requiring high-power RF signals within the C Band.

  3. Applications: The C Band 4500-5000MHz 100W RF Power Amplifier finds applications in satellite ground stations, radar systems, microwave links, point-to-point communications, and other C Band RF applications where high-power amplification is essential.

  4. Performance: This amplifier is designed to deliver high-performance amplification while maintaining signal integrity and reliability. It ensures that amplified signals retain their quality and accuracy within the C Band frequency range.

  5. Stability and Reliability: RF power amplifiers in the C Band are typically designed for stability and reliability, ensuring consistent performance in demanding environments.

  6. Versatility: Despite its specific frequency range and power output, this amplifier can be integrated into diverse RF systems and setups that require high-power amplification within the C Band.

In summary, the C Band 4500-5000MHz 100W RF Power Amplifier is tailored for amplifying RF signals within the C Band frequency range. Its high-power output and performance characteristics make it suitable for various C Band RF applications, including satellite communications and radar systems.

 

Outline Dimensional Drawing

Customized 4500-5000MHz 100W Low Noise High Power RF Power Amplifier for Telecommunication 1

Specification

 

Typical performance at +28V DC +25oC, and in a 50Ω system.

 

 

RF / ELECTRICAL
PARAMETERMINTYP.MAXUNIT
Operating Frequency4.5
5GHz
Input Power for Nominal Output
-15
dBm
RF Input Maximum (peak)
-5
dBm
Gain
59
dB
Output Power CW( peak RF input conditions at 4.75GHz)
50
dBm
Small Signal Gain Flatness
3
dB
P1dB44

dBm
P3dB48

dBm
PAPR

6dB
ACPR(Harmonic Suppression)
-30
dbc
Input Return Loss
1.5:12.0:1
Output Return Loss
1.5:12.0:1
Noise Figure(+25℃)

7db
PAE
30
%
Impedance
50
Ohm
Voltage
28
V

 

MECHANICAL
PARAMETERVALUEUNIT
Dimensions (L x W x H)180 x 90 x 22mm
RF Connectors (Input / Output)SMA- KFD/ SMA- KFD
DC ConnectorDB15
CoolingConsider heat dissipation with the system (Not Supplied)
Mountingφ3.5-4 Thru Hole
Weight≤2kg

 


ENVIRONMENTAL / PROTECTIONS
PARAMETERMINMAXUNIT
Operating Temp. (Housing Temp.)-40+60°C
Humidity Range0-100%
PA Baseplate Shutoff Temperature+ 90°C
TTL-level EnableEnable Input should be drivable from GPIO of external controller
Forward PowerStatus in DB15 connector
Reflected PowerStatus in DB15 connector
Input CurrentStatus in DB15 connector
Device TemperatureStatus in DB15 connector

 

INPUT/OUTPUT PINS
AMPLIFIER CONNECTOR TYPE:DB15
TRIAD CABLE PART NUMBER:——
PIN NUMBERLABELDESCRIPTION
1VDD+28Vdc IN
2VDD+28Vdc IN
3VDD+28Vdc IN
4VDD+28Vdc IN
5GNDGROUND
6GNDGROUND
7GNDGROUND
8GNDGROUND
9DGNDDGND
10NCNC
11On/Off

Amplifier Enable:TTL“HIGH (Logic 1)

Amplifier Disable:TTL“LOW”(Logic 0)

12Forward PowerPOWER DETECTOR (0-3.3V)
13Reflected PowerReflected DETECTOR(0-3.3V)
14Input CurrentAnalog voltage relative to IDD@5A/V: IDD=0.14+5A*△V
15Device Temperature

Analog voltage relative to module temperature

@10mv/℃:V=0.5+10mv*△℃


Technical Parameters

Advantages

Why Choose Us

Established in 2008

Focused on the development and manufacturing of RF and microwave products.

RF & Microwave Expertise

Product capabilities cover power amplifiers, active and passive components, antennas and subsystems.

Custom Engineering Support

Standard and customized solutions are available for different frequency, power, gain and interface requirements.

R&D and Production Capability

Supported by an experienced technical team, production facilities and continued product development.

Why Choose Us

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About Us

Nanjing Shinewave Technology Co., Ltd., established in 2008, specializes in the development, manufacturing and supply of RF and microwave products. Our portfolio includes power amplifiers, low-noise amplifiers, transceiver modules, frequency converters, frequency sources, passive components, antennas and subsystems. We provide both standard and customized solutions for a wide range of RF and microwave applications.

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