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1100-1400MHz 500W Compact High-Power RF Amplifier for Advanced Communication Systems

Minimum Order Quantity

1/pcs

Packaging Details

Standard Packing

Delivery Time

5-8 work days

Payment Terms

L/C, D/A, D/P, T/T, Western Union, MoneyGram

Description

The module is designed for commercial applications. The latest device technologies and design methods are employed to offer high power density, efficiency, and linearity in a smalllightweight  package.

Specification

Typical performance at +48V DC +25oC, and in a 50Ω system.


RF / ELECTRICAL

PARAMETER

MIN

TYP.

MAX

UNIT

Operating  Frequency

1100


1400

MHz

RF Pulsed signal (With External modulation signal)

RF INPUT


0


dBm

Duty cycle



10

%

Pulse width



20

us

P-sat Output Power


57


dBm

Power Gain


57


dB

Power Gain  Flatness


2


dB

Spurious Signals


-55


dBc

Harmonic  Signals


-20


dBc

Pulse delay(PA ON/OFF time)


1


us

Input  VSWR



2

In-Out impedance


50


Operating Voltage


48

50

V DC

Average Current@ 10% cycle


3

4

A


MECHANICAL

PARAMETER

VALUE

UNIT

Dimensions (L x W x  H)

200x150x30

mm

RF  Connectors (Input / Output)

SMA- KFD/ N- KFD

DC / Control Connector

D-SUB 7W2

Cooling

Consider heat dissipation with the system

Mounting

φ3.5-4 Thru Hole

Weight

2

kg


ENVIRONMENTAL / PROTECTIONS

PARAMETER

MIN

MAX

UNIT

Operating Temp. (Housing Temp.)

-20

+60

°C

Humidity Range

0-95

%


Connector Definition

AMPLIFIER CONNECTOR TYPE:

D-SUB 7W2

TRIAD CABLE PART NUMBER:

——

NUMBER

Definition

DESCRIPTION

A1

VDD

+48V

A2

GND

GND

1

Amp Enable

Enable : TTL Low”,  Disable : TTL High (Low : 0~0.5V, High : 2.5~5V)

(Pulse modulation synchronous signal, switch time less than 1us)

2

GND

Ground

 

3

Output Power

monitoring

Output Power Detection  (Output pulsed wave analog voltage)

@The peak of the pulse wave is relative to RF power

(0.1 ~ 3.0V relative to +30 dBm ~ +57dBm)

 

4

Reverse Power

monitoring

Reverse Power Detection  (Output pulsed wave analog voltage)

@The peak of the pulse wave is relative to RF power

(0.1 ~ 3.0V relative to +30 dBm ~ +57dBm)

5

Temp monitoring

Analog voltage relative to module temperature

@10mv/:V=0.5+10mv*△℃) (0 .75V  relative to 25℃)


Outline Dimensional Drawing

image.png

Technical Parameters

Advantages

Why Choose Us

Established in 2008

Focused on the development and manufacturing of RF and microwave products.

RF & Microwave Expertise

Product capabilities cover power amplifiers, active and passive components, antennas and subsystems.

Custom Engineering Support

Standard and customized solutions are available for different frequency, power, gain and interface requirements.

R&D and Production Capability

Supported by an experienced technical team, production facilities and continued product development.

Why Choose Us

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02

03

04

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About Us

Nanjing Shinewave Technology Co., Ltd., established in 2008, specializes in the development, manufacturing and supply of RF and microwave products. Our portfolio includes power amplifiers, low-noise amplifiers, transceiver modules, frequency converters, frequency sources, passive components, antennas and subsystems. We provide both standard and customized solutions for a wide range of RF and microwave applications.

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