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100W 2100-2180MHz RF Power Amplifier for wide-range signal transmission in wireless communication standards like LTE and UMTS

Minimum Order Quantity

1/pcs

Packaging Details

Standard Packing

Delivery Time

5-8 work days

Payment Terms

L/C, D/A, D/P, T/T, Western Union, MoneyGram

100W 2100-2180MHz RF Power Amplifier for wide-range signal transmission in wireless communication standards like LTE and UMTS

This 2100-2180MHz 100W RF Power Amplifier is a high-performance device designed for applications requiring reliable and powerful signal amplification. Its key features and applications include:

Key Features:

  1. Wide Frequency Range: Operates within 2100-2180MHz, supporting wireless communication standards like LTE and UMTS.

  2. High Power Output: Delivers up to 100W, ensuring strong signal transmission and extended coverage.

  3. Stability and Reliability: Metal casing for excellent shielding and overload protection for long-term operation.

  4. Low-Distortion Amplification: Maintains signal fidelity for high-precision communication and testing.

Main Applications:

  1. Communication Base Stations: Enhances signal quality and coverage for LTE/UMTS networks.

  2. Radar and Navigation: Boosts signal strength for radar systems and satellite navigation.

  3. Testing Systems: Provides accurate high-power signals for RF testing and calibration.

  4. Broadcasting: Ensures stable and wide-range signal transmission.

  5. Military and Industrial Use: Supports high-power needs in secure communications and industrial controls.

This amplifier is ideal for communication, radar, broadcasting, and industrial scenarios requiring high power and reliability.

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Specification

Typical performance at 28V  DC +25oC, and in a 50Ω system.

 

RF / ELECTRICAL

PARAMETER

MIN

TYP.

MAX

UNIT

Operating  Frequency

2.1


2.18

GHz

RF INPUT @ Output 50 dBm


10


dBm

Power Gain @ Output 50 dBm


40



P-1dB Output Power


50


dBm

P-sat Output Power


51


dBm

Power Gain  Flatness


±1


dB

In/Out Impedance

50

Ω

Spurious Signals


-60


dBc

Harmonic  Signals


-20


dBc

Gain Control range

0


50

dB

Gain Control step


1


dB

Operating Voltage


28


V

Currents@ Output 50 dBm


10


A

Input VSWR



2

——

 

MECHANICAL

PARAMETER

VALUE

UNIT

Dimensions (W x D x H)

165*100*30

mm

RF Connectors (Input / Output)

SMAKF / SMAFK

DC/Control Connector

JL23-24ZJWPower on/power off control; Monitoring parameters include output power, VSWR, Temperature, Currents, Voltage, Gain control

Cooling

Exteral Heatsink Required

Weight

2

kg

 

ENVIRONMENTAL / PROTECTIONS

PARAMETER

MIN

MAX

UNIT

Operating Temp.

-20

+55

°C

Storage Temp.

-40

+80

°C

Shock

MILSTD-810F/G


Vibration

MILSTD-810F/G


Protections

With over temperature protection, input over power protection, over voltage protection, over current protection,  over VSWR protection




Technical Parameters

Advantages

Why Choose Us

Established in 2008

Focused on the development and manufacturing of RF and microwave products.

RF & Microwave Expertise

Product capabilities cover power amplifiers, active and passive components, antennas and subsystems.

Custom Engineering Support

Standard and customized solutions are available for different frequency, power, gain and interface requirements.

R&D and Production Capability

Supported by an experienced technical team, production facilities and continued product development.

Why Choose Us

01

02

03

04

05

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About Us

Nanjing Shinewave Technology Co., Ltd., established in 2008, specializes in the development, manufacturing and supply of RF and microwave products. Our portfolio includes power amplifiers, low-noise amplifiers, transceiver modules, frequency converters, frequency sources, passive components, antennas and subsystems. We provide both standard and customized solutions for a wide range of RF and microwave applications.

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